Document Details
Document Type |
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Article In Conference |
Document Title |
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Lasing Output and Threshold Current Density in P-Doped InP/AlGaInP Quantum Dot Laser Diodes Lasing Output and Threshold Current Density in P-Doped InP/AlGaInP Quantum Dot Laser Diodes |
Subject |
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physics |
Document Language |
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English |
Abstract |
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We demonstrate the p-doping effect on lasing output and threshold current density. The lasing
wavelength peak became narrower as the doping concentration increases and has a red shift which
consistent with optical absorption ground state. |
Conference Name |
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24th IEEE International Semiconductor Laser Conference (ISLC) |
Duration |
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From : 07/9/2014 AH - To : 10/07/2014 AH
From : 07/9/2014 AD - To : 10/07/2014 AD |
Publishing Year |
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2014 AH
2014 AD |
Number Of Pages |
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1 |
Article Type |
: |
Article |
Conference Place |
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Palma de Mallorca, SPAIN |
Organizing Body |
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IEEE |
Added Date |
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Thursday, August 3, 2017 |
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Researchers
M. S Al-Ghamdi, | Al-Ghamdi, M. S[ | Investigator | Doctorate | msalghamdi@kau.edu.sa |
P.M Smowton | Smowton, P.M | Researcher | Doctorate | |
A.B Krysa | Krysa, A.B | Researcher | Doctorate | |
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